Description:This patent uses a nano-paterned substrate layer between n-type and p-type semiconductor layers. The nano-windows created within the substrate allow for a n-p junction between the semiconductor layers, which reduces defects in the crystal structure and increases efficiency.
Abstract:A method and a product made by treating a sulfur-containing hydrocarbon heavy feed, e.g., heavy crude asphaltene reduction is disposed herein. The method comprises the steps of: mixing the sulfur-containing hydrocarbon heavy feed with a hydrogen donor solvent and an addled silica to form a mixture and oxidizing the sulfur in the mixture at a temperature between 50° C. and 210° C. wherein the oxidation lowers the amount sulfur in the sulfur-containing hydrocarbon heavy feed by at least 90%.
Issue Date: 09/27/2016
Application Date: 03/14/2013
Post Date: 02/28/2018
UTEP Docket No: 2009-010
